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Thursday March 10, 2005
12 PM
PHO339

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"Carbon Nanotube p-n junction Diodes "
Dr. Ji Ung Lee
GE Global Research

The p-n junction diode is one of the most foundational devices in modern semiconductor electronics. It is the basis for most transistors, light emitting diodes, and lasers. I will describe the fabrication and characterization of ideal p-n junction diodes in individual single-walled carbon nanotubes (SWNTs). The p-n junction diode is formed using an electrostatic doping technique that preserves the pristine nature of CVD grown SWNTs. As such, these diodes can be well described by the ideal diode equation. The diode current-voltage characteristics are examined under near IR illumination that excites the first sub-bands of SWNTs. I will describe several characteristics of SWNT diodes such as quantum efficiency, origin of the quasi-particle (electrons and holes) currents, and their implications to excitons.

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