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[Magazines & News Articles][Journal Articles]
Biography
RESEARCH INTERESTS: *III-nitrides Optical and
electronic devices, MEMS CURRENT FOCUS: *Cluster Ion beam epitaxy of
III-N Dr Moustakas is the principle
investigator of the Wide Bangap Semiconductor Laboratory. This is a
state-of-the-art facility dedicated to studying the growth, fundamental
material properties, and fabrication of novel electronic and
opto-electronic devices. The lab specializes in III-nitride growth by
Molecular Beam Epitaxy(MBE) and Hydride Vapor Phase Epitaxy(HVPE). It
has a history in the development of LEDs and currently continues to
focus on LEDs and semiconductor lasers in the blue-UV region of the
electromagnetic spectrum. Theodore
D. Moustakas has been a Professor of the Electrical and Computer
Engineering Department at Boston University since 1987. He has also
been a Professor of Physics since 1991 and a Faculty Member of the
Center for Photonics Research since 1994. He is currently the director
of the Wide Bandgap Semiconductor Laboratory. He received the B.S.
degree in Physics from Aristotle University (Greece) in 1964 and the
Ph.D. degree in Solid State Science and Engineering from Columbia
University in 1974. He held research and visiting faculty positions at
Harvard University, Aristotle University, IBM T. J. Watson Research
Laboratory and Exxon Corporate Research Laboratory. Dr.
Moustakas’ research contributions cover a broad spectrum of topics in
opto-electronic materials and devices, including nitride
semiconductors, amorphous semiconductors, III-V compounds, diamond thin
films and metallic multi-layers. He is the co-editor of eight books,
including Gallium Nitride I (Academic Press, 1998) and Gallium Nitride
II (Academic Press, 1999), the author of chapters in eight books and
270 papers in technical journals and conference proceedings. He served
as a special editor of the Journal of Vacuum Science and Technology in
1984 and 1986 and of the Journal of Electronic Materials in 1995. He
presented 100 invited and plenary talks in national and international
conferences. He has been granted twenty-five U.S. patents (and five
pending) in the fields of nitride semiconductors, amorphous silicon and
diamond materials. Intellectual property that resulted from his work
has been licensed to a number of companies, including the two major
manufactures of blue LEDs and lasers (Cree in United States and Nichia
in Japan). This work is cited in the 2006 edition of Technology
Transfer Works: 100 Cases From Research to Realization, published by
The Association of University Technology Managers as part of the Better
World Project.
Dr. Moustakas is a Fellow of the American Physical Society and the Electrochemical Society. He is also active member in the Materials Research Society, the Electronic Materials Committee and he is a member of the Advisory Board of the North America MBE Conference. He organized a number of symposia for the American Physical Society, the Materials Research Society, and the Electrochemical Society and participated in the organization of numerous national and international conferences. In 2003 he was awarded an honorary doctoral degree from the Aristotle University for outstanding contributions to research and teaching.
Magazines & News Articles1.) M. Misra, A. Bhattacharyya, and T. D. Moustakas, "Nitride-based UV detectors improve photodetection," Laser Focus World, 2008, pp. 64-66 Journal Articles24.) K. Driscoll, Y. Liao, A. Bhattacharyya, L. Zhou, D. J. Smith, T. D. Moustakas, and R. Paiella, "Optically pumped intersubband emission of short-wave infrared radiation
with GaN/AlN quantum wells," Applied Physics Letters, Vol. 94, 27 February 2009 23.) E. Bellotti, K. Driscoll, T. D. Moustakas, and R. Paiella, "Monte Carlo simulation of terahertz quantum cascade laser structures based on wide-bandgap semiconductors," Journal of Applied Physics, Vol. 105, 2009, pp. 113103 22.) A. Bhattacharyya, T. D. Moustakas, L. Zhou, D. L. Smith, and W. Hug, "Deep ultraviolet emitting AIGaN quantum wells with high internal quantum efficiency," Applied Physics Letters, Vol. 94, 2009, pp. 181907 21.) Y. Li, A. Bhattacharyya, C. Thomidis, Y. Liao, T. D. Moustakas, and R. Paiella, "Refractive-index nonlinearities of intersubband transitions in GaN/AIN quantum-well waveguides," Journal of Applied Physics, Vol. 104, 2009, pp. 083101 20.) L. Colakerol, L. Piper, A. V. Fedorov, T. Chen, T. D. Moustakas, and K. E. Smith, "Observation of an inverted band structure near the surface of InN," Europhysics Letters, Vol. 83, August 2008, pp. 47003 19.) J. Henson, A. Bhattacharyya, T. D. Moustakas, and R. Paiella, "Controlling the recombination rate of semiconductor active layers via coupling to dispersion-engineered surface plasmons," Journal of the Optical Society of America B, Vol. 25, No. 8, August 2008, pp. 1328-1335 18.) T. D. Moustakas, T. Xu, C. Thomidis, A. Y. Nikiforov, L. Zhou, and D. J. Smith, "Growth of III-nitride quantum dots and their applications to blue-green LEDs," Physica Status Solid A, Vol. 205, No. 11, 2008, pp. 2560-2565 17.) S. Pookpanratana, R. France, M. Bar, L. Weinhardt, O. Fuchs, M. Blum, W. Yang, J. D. Denlinger, T. D. Moustakas, and C. Heske, "Intermixing and chemical structure at the interface between n-GaN and V-based contacts," Applied Physics Letters, Vol. 93, 2008, pp. 172106 16.) L. Zhou, R. Chandrasekaran, T. D. Moustakas, and D. J. Smith, "Structural characterization of non-polar (1120) and semi-polar (1126) GaN films grown on r-plane sapphire," Journal of Crystal Growth, Vol. 310, 2008, pp. 2981-2986 15.) E. Dimakis, A. Y. Nikiforov, C. Thomidis, L. Zhou, D. J. Smith, J. Abell, C. Kao, and T. D. Moustakas, "Growth and properties of near-UV light emitting diodes based on InN/GaN quantum wells," Physica Status Solid A, Vol. 205, No. 5, 2008, pp. 1070-1073 14.) E. Bellotti, K. Driscoll, T. D. Moustakas, and R. Paiella, "Monte Carlo study of GaN versus GaAs terahertz quantum cascade structures," Applied Physics Letters, Vol. 92, 2008, pp. 101112 13.) J. Abell, and T. D. Moustakas, "The role of dislocations as nonradiative recombination centers in InGaN quantum wells," Applied Physics Letters, Vol. 92, 2008, pp. 091901 12.) Y. Li, A. Bhattacharyya, C. Thomidis, T. D. Moustakas, and R. Paiella, "Ultrafast all-optical switching with low saturation energy via intersubband transitions in GaN/AIN quantum-well waveguides," Optics Express, Vol. 15, December 2007, pp. 17922-17927 11.) S. Riyopoulos, T. D. Moustakas, and J. S. Cabalu, "Enhanced transmission through quasirandom nanostructured dielectric interfaces via supercritical angle scattering," Journal of Applied Physics, Vol. 102, No. 4, 15 August 2007, pp. 043111 10.) T. Xu, A. Y. Nikiforov, R. France, C. Thomidis, A. D. Williams, and T. D. Moustakas, "Blue-green-red LEDs based on InGaN quantum dots grown by plasma-assisted molecular beam epitaxy," Physica Status Solid A, Vol. 204, June 2007, pp. 2098-2102 9.) S. Riyopoulos, T. D. Moustakas, and J. S. Cabalu, "Plasma nanosheath formation with carrier accumulation and enhanced localized spontaneous emission at "quantum wedges" in textured GaN," Physics of Plasmas, Vol. 14, No. 5, May 2007, pp. 053501 8.) Y. Li, A. Bhattacharyya, C. Thomidis, T. D. Moustakas, and R. Paiella, "Nonlinear optical waveguides based on nearinfrared intersubband transitions in GaN/AIN quantum wells," Optics Express, Vol. 15, No. 9, 30 April 2007, pp. 5860-5865 7.) S. Basu, M. W. Barsoum, A. D. Williams, and T. D. Moustakas, "Spherical nanoindentation and deformation mechanisms in freestanding GaN films," Journal of Applied Physics, Vol. 101, 15 April 2007, pp. 083522 6.) A. D. Williams, and T. D. Moustakas, "Formation of large-area freestanding gallium nitride substrates by natural stress-induced separation of GaN and sapphire," Journal of Crystal Growth, Vol. 300, No. 1, 1 March 2007, pp. 37-41 5.) R. France, T. Xu, P. Chen, R. Chandrasekaran, and T. D. Moustakas, "Vanadium-based Ohmic contacts to n-AlGaN in the entire alloy composition," Applied Physics Letters, Vol. 90, No. 6, 5 February 2007, pp. 062115 4.) Y. Wang, A. S. Ozcan, C. Sanborn, K. F. Ludwig, A. Bhattacharyya, R. Chandrasekaran, T. D. Moustakas, L. Zhou, and D. J. Smith, "Real-time x-ray studies of gallium nitride nanodot formation by droplet heteroepitaxy," Journal of Applied Physics, Vol. 102, 2007, pp. 073522 3.) K. Driscoll, A. Bhattacharyya, T. D. Moustakas, R. Paiella, L. Zhou, and D. J. Smith, "Intersubband absorption in AIN/GaN/AlGaN couple quantum wells," Applied Physics Letters, Vol. 91, 2007, pp. 141104 2.) T. Xu, L. Zhou, Y. Wang, A. S. Ozcan, K. F. Ludwig, D. J. Smith, and T. D. Moustakas, "GaN quantum dot superlattices grown by molecular beam epitaxy at high temperature," Journal of Applied Physics, Vol. 102, 2007, pp. 073517 1.) L. Piper, L. Colakerol, T. Learmonth, P. Glans, K. E. Smith, F. Fuchs, J. Furthmuller, F. Bechstedt, T. Chen, T. D. Moustakas, and J. Guo, "Electronic structure of InN studied using soft x-ray emission, soft x-ray absorption and quasiparticle band structure calculations," Physical Review B, Vol. 76, 2007, pp. 245204 |
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